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NVD4804NT4G

MOSFET N-CH 30V 14A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVD4804NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 526
  • Description: MOSFET N-CH 30V 14A DPAK (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 19.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Pulsed Drain Current-Max (IDM) 230A
DS Breakdown Voltage-Min 30V
Height 2.38mm
Length 6.73mm
Width 7.49mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.43W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.66W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 11.5V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V
Current - Continuous Drain (Id) @ 25°C 14.5A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
See Relate Datesheet