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NVD5490NLT4G

Trans MOSFET N-CH 60V 5A Automotive 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVD5490NLT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 995
  • Description: Trans MOSFET N-CH 60V 5A Automotive 3-Pin(2+Tab) DPAK T/R (Kg)

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Details

Tags

Parameters
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.4W Ta 49W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.4W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 64m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta 17A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.085Ohm
Drain to Source Breakdown Voltage 60V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet