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  • NVD5802NT4G

NVD5802NT4G

MOSFET N-CH 40V 16.4A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVD5802NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 138
  • Description: MOSFET N-CH 40V 16.4A DPAK (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 52ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 101A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16.4A
Drain-source On Resistance-Max 0.0078Ohm
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 240 mJ
Height 2.38mm
Length 6.22mm
Width 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 27 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 93.75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
See Relate Datesheet