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  • NVD5862NT4G

NVD5862NT4G

MOSFET N-CH 60V 90A DPAK-4


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVD5862NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 534
  • Description: MOSFET N-CH 60V 90A DPAK-4 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 98A
Drain-source On Resistance-Max 0.0057Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 205 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4.1W Ta 115W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.1W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 48A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
See Relate Datesheet