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NVF2955T1G

NVF2955T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVF2955T1G
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 605
  • Description: NVF2955T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Pins 4
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Weight 250.212891mg
Vgs (Max) ±20V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 38 ns
Turn-Off Delay Time 65 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 20V
Published 2008
Drain to Source Breakdown Voltage -60V
Series Automotive, AEC-Q101
Avalanche Energy Rating (Eas) 225 mJ
JESD-609 Code e3
Pbfree Code yes
Height 1.65mm
Part Status Active
Length 6.7mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 3.7mm
Number of Terminations 4
Radiation Hardening No
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Resistance 170MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Factory Lead Time 12 Weeks
Input Capacitance (Ciss) (Max) @ Vds 492pF @ 25V
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Package / Case TO-261-4, TO-261AA
Rise Time 7.6ns
Surface Mount YES
See Relate Datesheet