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NVJD4401NT1G

MOSFET NFET SC88 20V 630MA 375MO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVJD4401NT1G
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 862
  • Description: MOSFET NFET SC88 20V 630MA 375MO (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 270mW
Pin Count 6
Number of Elements 2
Element Configuration Dual
Power Dissipation 550mW
Turn On Delay Time 83 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C 630mA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 227ns
Fall Time (Typ) 506 ns
Turn-Off Delay Time 786 ns
Continuous Drain Current (ID) 910mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.91A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet