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NVMFS5832NLT3G

Trans MOSFET N-CH 40V 21A Automotive 5-Pin(4+Tab) SO-FL T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVMFS5832NLT3G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 733
  • Description: Trans MOSFET N-CH 40V 21A Automotive 5-Pin(4+Tab) SO-FL T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Number of Elements 1
Power Dissipation-Max 3.7W Ta 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0072Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet