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NVMFS5C430NLT1G

MOSFET N-CH 40V 200A SO8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVMFS5C430NLT1G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 637
  • Description: MOSFET N-CH 40V 200A SO8FL (Kg)

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Details

Tags

Parameters
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0022Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 493 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet