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  • NVMFS6H800NT1G

NVMFS6H800NT1G

NVMFS6H800NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVMFS6H800NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 428
  • Description: NVMFS6H800NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 330μA
Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V
Current - Continuous Drain (Id) @ 25°C 28A Ta 203A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Height 1.1mm
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Operating Temperature -55°C~175°C TJ
RoHS Status RoHS Compliant
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 3.8W Ta 200W Tc
Power Dissipation 3.8W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 50A, 10V
See Relate Datesheet