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  • NVR1P02T1G

NVR1P02T1G

NVR1P02T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVR1P02T1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 881
  • Description: NVR1P02T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 1A
Operating Temperature -55°C~150°C TJ
Drain to Source Breakdown Voltage -20V
Height 1.01mm
Length 3.04mm
Packaging Tape & Reel (TR)
Width 1.4mm
Published 2012
Radiation Hardening No
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 5V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Factory Lead Time 2 Weeks
Rise Time 9ns
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case TO-236-3, SC-59, SOT-23-3
Fall Time (Typ) 3 ns
Surface Mount YES
Turn-Off Delay Time 9 ns
Number of Pins 3
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
See Relate Datesheet