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  • NVR5124PLT1G

NVR5124PLT1G

NVR5124PLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVR5124PLT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 237
  • Description: NVR5124PLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 470mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation -470mW
Turn On Delay Time 6.6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 12.2 ns
Continuous Drain Current (ID) -1.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.365Ohm
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet