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  • NVTFS4824NTAG

NVTFS4824NTAG

MOSFET N-CH 30V 18.2A 8WDFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS4824NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 131
  • Description: MOSFET N-CH 30V 18.2A 8WDFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 3.2W Ta 21W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 12V
Current - Continuous Drain (Id) @ 25°C 18.2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 27ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 402A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 72 mJ
Height 750μm
Length 3.15mm
Width 3.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet