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NVTFS4C06NTAG

MOSFET NFET U8FL 30V 71A 4.2MOHM


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS4C06NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 941
  • Description: MOSFET NFET U8FL 30V 71A 4.2MOHM (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 71A
Drain-source On Resistance-Max 0.0061Ohm
Pulsed Drain Current-Max (IDM) 367A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 34 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet