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NVTFS5124PLTWG

Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS5124PLTWG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 620
  • Description: Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 18W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 260m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 24A
Height 750μm
Length 3.15mm
Width 3.15mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet