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  • NVTFS5820NLWFTWG

NVTFS5820NLWFTWG

MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS5820NLWFTWG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 959
  • Description: MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 21W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1462pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 247A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet