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  • NVTFS5C673NLTAG

NVTFS5C673NLTAG

MOSFET N-CH 60V 13A 50A 8WDFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS5C673NLTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 398
  • Description: MOSFET N-CH 60V 13A 50A 8WDFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.1W Ta 46W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 46W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 290A
Avalanche Energy Rating (Eas) 88 mJ
Max Junction Temperature (Tj) 175°C
Height 800μm
RoHS Status ROHS3 Compliant
See Relate Datesheet