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NVTFS6H850NWFTAG

TRENCH 8 80V NFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTFS6H850NWFTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 162
  • Description: TRENCH 8 80V NFET (Kg)

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IMPORTANT NOTICE

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.2W Ta 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 40V
Current - Continuous Drain (Id) @ 25°C 11A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 271 mJ
RoHS Status RoHS Compliant
See Relate Datesheet