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NVTR0202PLT1G

Single P-Channel Power MOSFET -20V, -400mA, 800mO Small Signal MOSFET -20V -400mA 800 mOhm Single P-Channel SOT-23 Lo...


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVTR0202PLT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 395
  • Description: Single P-Channel Power MOSFET -20V, -400mA, 800mO Small Signal MOSFET -20V -400mA 800 mOhm Single P-Channel SOT-23 Lo... (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 5V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.18nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.4A
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet