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  • NX138BKR

NX138BKR

MOSFET N-CH 60V TO-236AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-NX138BKR
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 459
  • Description: MOSFET N-CH 60V TO-236AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 310mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20.2pF @ 30V
Current - Continuous Drain (Id) @ 25°C 265mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.49nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 265mA
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 0.265A
Drain-source On Resistance-Max 3.8Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
See Relate Datesheet