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  • NX3008PBKMB,315

NX3008PBKMB,315

NX3008PBKMB - 30 V, single P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-NX3008PBKMB,315
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 656
  • Description: NX3008PBKMB - 30 V, single P-channel Trench MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 360mW Ta 2.7W Tc
Element Configuration Single
Power Dissipation 715mW
Turn On Delay Time 19 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 15V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage -30V
Drain to Source Breakdown Voltage -30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet