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NX3008PBKV,115

NX3008PBKV - 30 V, 220 mA dual P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-NX3008PBKV,115
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 747
  • Description: NX3008PBKV - 30 V, 220 mA dual P-channel Trench MOSFET (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Terminal Form FLAT
Pin Count 6
JESD-30 Code R-PDSO-G3
Number of Elements 2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 390mW
Turn On Delay Time 19 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 220mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
See Relate Datesheet