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  • NX7002AK,215

NX7002AK,215

NEXPERIA - NX7002AK,215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-NX7002AK,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 657
  • Description: NEXPERIA - NX7002AK,215 - MOSFET Transistor, N Channel, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 265mW Ta 1.33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 10V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.43nC @ 4.5V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 1.6V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 5.2Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet