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NZT605

NZT605 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NZT605
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 752
  • Description: NZT605 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 110V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 110V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 110V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 10V
hFE Min 200
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.5mm
Width 3.56mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.5A
Base Part Number NZT605
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
See Relate Datesheet