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PBHV8215Z,115

PBHV8215Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PBHV8215Z,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 342
  • Description: PBHV8215Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package SOT-223
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.45W
Base Part Number PBHV8215
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.45W
Power - Max 1.45W
Gain Bandwidth Product 33MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 400mA, 2A
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 2A
Max Breakdown Voltage 150V
Frequency - Transition 33MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
hFE Min 55
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet