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PBHV8560ZX

PBHV8560ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PBHV8560ZX
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 450
  • Description: PBHV8560ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Max Power Dissipation 650mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 650mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
See Relate Datesheet