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PBSS4160PANPSX

PBSS4160PANPS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PBSS4160PANPSX
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 726
  • Description: PBSS4160PANPS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 370mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 2
Polarity NPN, PNP
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 120mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 2V / 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 175MHz
Max Breakdown Voltage 60V
Frequency - Transition 175MHz 125MHz
VCEsat-Max 0.24 V
RoHS Status ROHS3 Compliant
See Relate Datesheet