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PBSS4230PANP,115

NEXPERIA - PBSS4230PANP,115 - Bipolarer Einzeltransistor (BJT), NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PBSS4230PANP,115
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 987
  • Description: NEXPERIA - PBSS4230PANP,115 - Bipolarer Einzeltransistor (BJT), NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Case Connection COLLECTOR
Power - Max 510mW
Transistor Application SWITCHING
Gain Bandwidth Product 95MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
Current - Collector (Ic) (Max) 2A
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -75mV
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet