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PD20010-E

Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-PD20010-E
  • Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Datasheet: PDF
  • Stock: 687
  • Description: Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 25 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 3
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature ESD PROTECTION, HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 59W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Frequency 2GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD20010
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 59W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 15V
Gain 11dB
Max Output Power 15W
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 40V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
RoHS Status ROHS3 Compliant
See Relate Datesheet