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PD57002-E

FET RF 65V 960MHZ PWRSO10


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-PD57002-E
  • Package: PowerSO-10 Exposed Bottom Pad
  • Datasheet: -
  • Stock: 503
  • Description: FET RF 65V 960MHZ PWRSO10 (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Current Rating 250mA
Frequency 960MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PD57002
Pin Count 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.75W
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Max Output Power 2W
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Min Breakdown Voltage 65V
Power Gain 15dB
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 65V
Max Power Dissipation 4.75W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
See Relate Datesheet