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PD85035C

Trans RF MOSFET N-CH 40V 8A 3-Pin Case M-243 Box


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-PD85035C
  • Package: M243
  • Datasheet: -
  • Stock: 304
  • Description: Trans RF MOSFET N-CH 40V 8A 3-Pin Case M-243 Box (Kg)

Purchase & Inquiry

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Screw
Package / Case M243
Number of Pins 243
Packaging Bulk
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 108W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8A
Frequency 945MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD85035
Pin Count 2
JESD-30 Code R-CDFM-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 108W
Case Connection SOURCE
Current - Test 350mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 15V
Gain 17.5dB
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 40V
Power - Output 15W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
RoHS Status ROHS3 Compliant
See Relate Datesheet