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PDTC114YT,215

NEXPERIA - PDTC114YT,215 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PDTC114YT,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 431
  • Description: NEXPERIA - PDTC114YT,215 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 100 mA, 10 kohm, 47 kohm (Kg)

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Details

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Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Power Dissipation Ambient-Max 0.25W
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTC114
Pin Count 3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Polarity NPN
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
See Relate Datesheet