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PEMX1,115

PEMX1 Series 40 V 100 mA 300 mW NPN General Purpose Double Transistor - SOT-666


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PEMX1,115
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 622
  • Description: PEMX1 Series 40 V 100 mA 300 mW NPN General Purpose Double Transistor - SOT-666 (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Form FLAT
Frequency 100MHz
Base Part Number P*MX1
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 200mW
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet