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PH2925U,115

MOSFET N-CH 25V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PH2925U,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 999
  • Description: MOSFET N-CH 25V 100A LFPAK (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 250 mJ
Height 1.1mm
Length 5mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 4.5V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 114 ns
Turn-Off Delay Time 258 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 25V
See Relate Datesheet