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PH3120L,115

MOSFET N-CH 20V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PH3120L,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 577
  • Description: MOSFET N-CH 20V 100A LFPAK (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Elements 1
Power Dissipation-Max 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.65m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4457pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 48.5nC @ 4.5V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 88 ns
Turn-Off Delay Time 114 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 300A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet