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  • PHK31NQ03LT,518

PHK31NQ03LT,518

MOSFET N-CH 30V 30.4A 8-SOIC


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHK31NQ03LT,518
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 531
  • Description: MOSFET N-CH 30V 30.4A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchMOS™
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 6.9W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.9W
Turn On Delay Time 37 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4235pF @ 12V
Current - Continuous Drain (Id) @ 25°C 30.4A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 62ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 30.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet