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  • PHP191NQ06LT,127

PHP191NQ06LT,127

MOSFET N-CH 55V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHP191NQ06LT,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 552
  • Description: MOSFET N-CH 55V 75A TO220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 63 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7665pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Factory Lead Time 12 Weeks
Gate Charge (Qg) (Max) @ Vgs 95.6nC @ 5V
Mounting Type Through Hole
Rise Time 232ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 178 ns
Package / Case TO-220-3
Turn-Off Delay Time 273 ns
Surface Mount NO
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 15V
Number of Pins 3
Max Dual Supply Voltage 55V
Weight 6.000006g
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 55V
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 240A
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 560 mJ
Packaging Tube
Height 9.4mm
Published 2010
Length 10.3mm
Series TrenchMOS™
Width 4.7mm
Radiation Hardening No
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300W Tc
See Relate Datesheet