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  • PHT4NQ10T,135

PHT4NQ10T,135

NEXPERIA - PHT4NQ10T,135 - MOSFET Transistor, N Channel, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHT4NQ10T,135
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 598
  • Description: NEXPERIA - PHT4NQ10T,135 - MOSFET Transistor, N Channel, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 6.9W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.9W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1.75A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Rise Time 13ns
Factory Lead Time 6 Weeks
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case TO-261-4, TO-261AA
Fall Time (Typ) 11 ns
Surface Mount YES
Turn-Off Delay Time 20 ns
Number of Pins 4
Continuous Drain Current (ID) 3.5A
Weight 4.535924g
Threshold Voltage 3V
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 20V
Operating Temperature -65°C~150°C TJ
Max Dual Supply Voltage 100V
Packaging Tape & Reel (TR)
Drain to Source Breakdown Voltage 100V
Published 1997
Height 6.35mm
Series TrenchMOS™
Length 6.35mm
Width 6.35mm
JESD-609 Code e3
Part Status Obsolete
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Lead Free Lead Free
Resistance 250MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet