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  • PHT6NQ10T,135

PHT6NQ10T,135

MOSFET TAPE13 PWR-MOS


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PHT6NQ10T,135
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 608
  • Description: MOSFET TAPE13 PWR-MOS (Kg)

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 10V
Package / Case TO-261-4, TO-261AA
Vgs (Max) ±20V
Surface Mount YES
Fall Time (Typ) 15 ns
Number of Pins 4
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3A
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 20V
Operating Temperature -65°C~150°C TJ
Max Dual Supply Voltage 100V
Packaging Tape & Reel (TR)
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.09Ohm
Published 1999
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 26A
Series TrenchMOS™
Height 1.7mm
JESD-609 Code e3
Length 6.7mm
Part Status Active
Width 3.7mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
Number of Terminations 4
RoHS Status ROHS3 Compliant
Lead Free Lead Free
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta 8.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 15ns
See Relate Datesheet