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  • PMBF170,215

PMBF170,215

NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMBF170,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 493
  • Description: NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 300mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 2 V
Min Breakdown Voltage 60V
Height 1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
REACH SVHC No SVHC
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
RoHS Status ROHS3 Compliant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Lead Free Lead Free
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Power Dissipation-Max 830mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
FET Type N-Channel
See Relate Datesheet