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PMBFJ309,215

PMBFJ309,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-PMBFJ309,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 261
  • Description: PMBFJ309,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MBFJ309
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 250mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
JEDEC-95 Code TO-236AB
DS Breakdown Voltage-Min 25V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.25W
Feedback Cap-Max (Crss) 2.5 pF
Highest Frequency Band VERY HIGH FREQUENCY B
Current - Drain (Idss) @ Vds (Vgs=0) 12mA @ 10V
Voltage - Cutoff (VGS off) @ Id 1V @ 1μA
Voltage - Breakdown (V(BR)GSS) 25V
Resistance - RDS(On) 50Ohm
RoHS Status ROHS3 Compliant
See Relate Datesheet