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PMCXB900UEZ
Purchase
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For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
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(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
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are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Power Dissipation | 265mW |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N and P-Channel Complementary |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 620m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 600mA 500mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 8V |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet