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PMDXB600UNEZ

MOSFET 2N-CH 20V 0.6A 6DFN


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMDXB600UNEZ
  • Package: 6-XFDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 808
  • Description: MOSFET 2N-CH 20V 0.6A 6DFN (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 265mW
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.6 ns
Power - Max 265mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 9.2ns
Fall Time (Typ) 51 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet