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PMN48XP,115

PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMN48XP,115
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 186
  • Description: PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Resistance 55MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 530mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 530mW
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 22ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 4.1A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet