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PMPB20XNEAZ

MOSFET N-CH 20V SOT1220


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMPB20XNEAZ
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 274
  • Description: MOSFET N-CH 20V SOT1220 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 460mW Ta 12.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 7.5A
Drain-source On Resistance-Max 0.02Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet