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  • PMPB215ENEAX

PMPB215ENEAX

Mosfet Transistor, N Channel, 1.9 A, 80 V, 0.175 Ohm, 10 V, 1.7 V Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMPB215ENEAX
  • Package: 6-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 440
  • Description: Mosfet Transistor, N Channel, 1.9 A, 80 V, 0.175 Ohm, 10 V, 1.7 V Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
Reference Standard IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta 15.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 40V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 1.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.23Ohm
Pulsed Drain Current-Max (IDM) 7.6A
DS Breakdown Voltage-Min 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet