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  • PMV20XNER

PMV20XNER

Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMV20XNER
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 102
  • Description: Mosfet Transistor, N Channel, 5.7 A, 30 V, 0.019 Ohm, 4.5 V, 650 Mv Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 510mW Ta 6.94W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 5.7A
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 0.023Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard IEC-60134
See Relate Datesheet