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  • PMV230ENEAR

PMV230ENEAR

NEXPERIA - PMV230ENEAR - MOSFET Transistor, N Channel, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMV230ENEAR
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 383
  • Description: NEXPERIA - PMV230ENEAR - MOSFET Transistor, N Channel, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 480mW Ta 1.45W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 222m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 177pF @ 30V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.5A
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 0.222Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
See Relate Datesheet