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  • PMV30UN2R

PMV30UN2R

In a Pack of 50, N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMV30UN2R
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 977
  • Description: In a Pack of 50, N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 490mW Ta 5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 650mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet