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  • PMV32UP,215

PMV32UP,215

NEXPERIA - PMV32UP,215 - MOSFET-Transistor, p-Kanal, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMV32UP,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 597
  • Description: NEXPERIA - PMV32UP,215 - MOSFET-Transistor, p-Kanal, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV (Kg)

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Details

Tags

Parameters
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 4.5V
Rise Time 21ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage -20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 510mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 510mW
See Relate Datesheet