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  • PMV40UN2R

PMV40UN2R

NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMV40UN2R
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 528
  • Description: NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 635pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage 400mV
JEDEC-95 Code TO-236AB
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 36mOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 490mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 490mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 3.7A, 4.5V
See Relate Datesheet